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    L4206S PDF Datasheet瀏覽和下載

    型號.:
    L4206S
    PDF下載:
    下載PDF文件
    內容描述:
    [20Amperes,600Volts Insulated Common Cathode Ultra Fast Recovery Rectifiers]
    文件大小:
    5184 K
    文件頁數:
    2 Pages
    品牌Logo:
    品牌名稱:
    THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
     瀏覽型號L4206S的Datasheet PDF文件第2頁 
    L4206S
    L4206S
    TO-3PF(TO-3PML)
    Pb
    Pb Free Plating Product
    20Amperes,600Volts Insulated Common Cathode Ultra Fast Recovery Rectifiers
    APPLICATION
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    Freewheeling, Snubber, Clamp
    Inversion Welder
    PFC
    Plating Power Supply
    Ultrasonic Cleaner and Welder
    Converter & Chopper
    UPS
    Anode
    PRODUCT FEATURE
    ·
    Ultrafast Recovery Time
    ·
    Soft Recovery Characteristics
    ·
    Low Recovery Loss
    ·
    Low Forward Voltage
    ·
    High Surge Current Capability
    ·
    Low Leakage Current
    Internal Configuration
    Base Backside
    Cathode
    Anode
    GENERAL DESCRIPTION
    L4206S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
    Absolute Maximum Ratings
    Parameter
    Repetitive peak reverse voltage
    Continuous forward current
    (total device)
    Single pulse forward current
    (total device)
    Maximum repetitive forward current
    Operating junction
    Storage temperatures
    Symbol
    V
    RRM
    I
    F(AV)
    I
    FSM
    I
    FRM
    Tj
    Tstg
    Test Conditions
    Tc =110°C
    Tc =25°C
    Square wave, 20kHZ
    Values
    600
    20
    160
    60
    175
    -55 to +175
    °C
    °C
    A
    Units
    V
    Electrical characteristics (Ta=25°C unless otherwise specified)
    Parameter
    Breakdown voltage
    Blocking voltage
    Forward voltage
    (Per Diode)
    Reverse leakage
    current(Per Diode)
    Reverse recovery
    time(Per Diode)
    Symbol
    V
    BR
    ,
    V
    R
    V
    F
    Test Conditions
    I
    R
    =100μA
    I
    F
    =10A
    I
    F
    =10A, Tj =125°C
    V
    R
    = V
    RRM
    I
    R
    Tj=150°C, V
    R
    =600V
    I
    F
    =0.5A, I
    R
    =1A, I
    RR
    =0.25A
    I
    F
    =1A,V
    R
    =30V, di/dt =200A/us
    35
    27
    Min
    600
    1.35
    1.10
    1.60
    1.40
    20
    200
    45
    35
    μA
    V
    Typ.
    Max.
    Units
    t
    rr
    ns
    Thermal characteristics
    Junction-to-Case
    Paramter
    Symbol
    R
    θJC
    Typ
    1.2
    / W
    Units
    Rev.08T
    ? 1995 Thinki Semiconductor Co., Ltd.
    Page 1/2
    http://www.thinkisemi.com.tw/
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